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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
DC Characteristics
Table 12: DC Operating Characteristics (V DD = 2.7- 3.6V)
Limits
Symbol
I DDR
Parameter
Read Current
Min
Typ
12
Max
18
Units
mA
Test Conditions
V DD =V DD Min,
CE#=0.1 V DD /0.9 V DD @33 MHz,
SO=open
I DDW
Program and Erase Cur-
30
mA
CE#=V DD
rent
I SB1
Standby Current
8
15
μA
CE#=V DD , V IN =V DD or V SS
I LI
I LO
V IL
V IH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
0.7
1
1
0.8
μA
μA
V
V
V IN =GND to V DD , V DD =V DD Max
V OUT =GND to V DD , V DD =V DD Max
V DD =V DD Min
V DD =V DD Max
V DD
V OL
V OH
Output Low Voltage
Output High Voltage
V DD -
0.2
V
V
I OL =100 μA, V DD =V DD Min
I OH =-100 μA, V DD =V DD Min
0.2
T12.0 25017
Table 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
C OUT1
Description
Output Pin Capacitance
Test Condition
V OUT = 0V
Maximum
12 pF
C IN
1
Input Capacitance
V IN = 0V
6 pF
T13.0 25017
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
N END
T DR1
I LTH1
1
Endurance
Data Retention
Latch Up
100,000
100
100 + I DD
Cycles
Years
mA
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T14.0 25017
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
?2011 Silicon Storage Technology, Inc.
32
DS-25017A
04/11
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